SiC Trench Plasma Etching for SiC Power Device Fabrication - Samco Inc.
4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region
Trench-structure SiC-MOSFETs and Actual Products | What are SiC-MOSFETs? – SiC-MOSFET Features | TechWeb
Trench-structure SiC-MOSFETs and Actual Products | What are SiC-MOSFETs? – SiC-MOSFET Features | TechWeb
ROHM Gen 4: A Technical Review | TechInsights
SiC Trench MOSFETs' Reliability under Short-Circuit Conditions | Encyclopedia MDPI
Mitsubishi Electric develops trench-type SiC MOSFET with electric-field-limiting structure
Mitsubishi Develops new Trench-type SiC-MOSFET - News
Highly durable silicon carbide (SiC) power semiconductor TED-MOS for energy saving in electric vehicle motors
Figure 1 from SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss | Semantic Scholar
ROHM claims first trench-type SiC MOSFET
Preparation of Papers in Two-Column Format for the Proceedings of the 2004 Sarnoff Symposium
Schematic view of the planar and trench MOSFET cross-sections with the... | Download Scientific Diagram
ROHM Gen 4: A Technical Review | TechInsights
Fuji Electric Develops “SiC-MOSFET with trench gate structure,” offering some of the lowest resistance in the world
Infineon Launches Automotive Qualified SiC Power Module for EV Traction Inverters - Power Electronics News
Two typical SiC MOSFET flavors: (a) planar and (b) trench. Figure... | Download Scientific Diagram
Materials | Free Full-Text | 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics
Trench-Assisted Planar Gate SiC MOSFET Technology runs 25°C cooler than competition. | Navitas
A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge
Figure 6 from Analysis of 1.2 kV 4H-SiC Trench-Gate MOSFETs with Thick Trench Bottom Oxide | Semantic Scholar
Technology Details - Infineon Technologies
Energies | Free Full-Text | 4H-SiC Double-Trench MOSFET with Side Wall Heterojunction Diode for Enhanced Reverse Recovery Performance
Trench SiC MOSFET cuts on-resistance in half ...
Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics - ScienceDirect
